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PJD11N06A-AU_L2_000A1

PJD11N06A-AU_L2_000A1 Panjit International Inc.

PJD11N06A-AU.pdf Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
25+ 0.73 EUR
100+ 0.5 EUR
500+ 0.39 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 21
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Technische Details PJD11N06A-AU_L2_000A1 Panjit International Inc.

Description: 60V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V, Power Dissipation (Max): 2.4W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V, Qualification: AEC-Q101.

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PJD11N06A-AU_L2_000A1 PJD11N06A-AU_L2_000A1 Hersteller : Panjit PJD11N06A-AU-1867564.pdf MOSFET 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.85 EUR
10+ 0.73 EUR
100+ 0.55 EUR
500+ 0.43 EUR
1000+ 0.34 EUR
3000+ 0.29 EUR
9000+ 0.26 EUR
Mindestbestellmenge: 4
PJD11N06A-AU_L2_000A1 PJD11N06A-AU_L2_000A1 Hersteller : Panjit International Inc. PJD11N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101
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