PJD11N06A-AU_L2_000A1 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2952 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.2 EUR |
| 24+ | 0.74 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
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Technische Details PJD11N06A-AU_L2_000A1 Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V, Power Dissipation (Max): 2.4W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PJD11N06A-AU_L2_000A1 nach Preis ab 0.26 EUR bis 1.21 EUR
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PJD11N06A-AU_L2_000A1 | Hersteller : Panjit |
MOSFETs 60V N-Channel Enhancement Mode MOSFET |
auf Bestellung 1444 Stücke: Lieferzeit 10-14 Tag (e) |
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PJD11N06A-AU_L2_000A1 | Hersteller : Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V Power Dissipation (Max): 2.4W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| PJD11N06A-AU_L2_000A1 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |