PJD18N20_L2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 200V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.57 EUR |
| 6000+ | 0.54 EUR |
| 9000+ | 0.5 EUR |
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Technische Details PJD18N20_L2_00001 Panjit International Inc.
Description: 200V N-CHANNEL ENHANCEMENT MODE, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V.
Weitere Produktangebote PJD18N20_L2_00001 nach Preis ab 0.54 EUR bis 1.51 EUR
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PJD18N20_L2_00001 | Hersteller : Panjit International Inc. |
Description: 200V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V |
auf Bestellung 11695 Stücke: Lieferzeit 10-14 Tag (e) |
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PJD18N20_L2_00001 | Hersteller : Panjit |
MOSFET 200V N-Channel Enhancement Mode MOSFET |
auf Bestellung 10816 Stücke: Lieferzeit 10-14 Tag (e) |
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PJD18N20_L2_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 11A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 24nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PJD18N20-L2-00001 | Hersteller : Panjit |
MOSFET TO-252AA/MOS/TO/NFET-200SMN |
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PJD18N20_L2_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 11A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 24nC |
Produkt ist nicht verfügbar |