PJD25N03_L2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.21 EUR |
| 9000+ | 0.20 EUR |
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Technische Details PJD25N03_L2_00001 Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V, Power Dissipation (Max): 2W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V.
Weitere Produktangebote PJD25N03_L2_00001 nach Preis ab 0.21 EUR bis 1.14 EUR
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PJD25N03_L2_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA Mounting: SMD Drain-source voltage: 30V Drain current: 25A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 100A Case: TO252AA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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PJD25N03_L2_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA Mounting: SMD Drain-source voltage: 30V Drain current: 25A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 100A Case: TO252AA |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJD25N03_L2_00001 | Hersteller : Panjit |
MOSFET 30V N-Channel Enhancement Mode MOSFET |
auf Bestellung 2036 Stücke: Lieferzeit 10-14 Tag (e) |
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PJD25N03_L2_00001 | Hersteller : Panjit International Inc. |
Description: 30V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V |
auf Bestellung 14584 Stücke: Lieferzeit 10-14 Tag (e) |
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PJD25N03-L2-00001 | Hersteller : Panjit |
MOSFET TO-252AA/MOS/TO/NFET-30SMN |
Produkt ist nicht verfügbar |