Produkte > PANJIT INTERNATIONAL INC. > PJD25N03_L2_00001
PJD25N03_L2_00001

PJD25N03_L2_00001 Panjit International Inc.

PJD25N03.pdf Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.23 EUR
6000+0.21 EUR
9000+0.20 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PJD25N03_L2_00001 Panjit International Inc.

Description: 30V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V, Power Dissipation (Max): 2W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V.

Weitere Produktangebote PJD25N03_L2_00001 nach Preis ab 0.21 EUR bis 1.14 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PJD25N03_L2_00001 PJD25N03_L2_00001 Hersteller : Panjit PJD25N03-1867369.pdf MOSFET 30V N-Channel Enhancement Mode MOSFET
auf Bestellung 2036 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.69 EUR
10+0.58 EUR
100+0.43 EUR
500+0.34 EUR
1000+0.27 EUR
3000+0.23 EUR
9000+0.21 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N03_L2_00001 PJD25N03_L2_00001 Hersteller : Panjit International Inc. PJD25N03.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V
auf Bestellung 14584 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
25+0.71 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N03_L2_00001 Hersteller : PanJit Semiconductor PJD25N03.pdf PJD25N03-L2 SMD N channel transistors
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
132+0.54 EUR
293+0.24 EUR
309+0.23 EUR
3000+0.22 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N03-L2-00001 PJD25N03-L2-00001 Hersteller : Panjit PJD25N03-1867369.pdf MOSFET TO-252AA/MOS/TO/NFET-30SMN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH