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PJD25N06A_L2_00001

PJD25N06A_L2_00001 Panjit International Inc.

PJD25N06A.pdf
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.39 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details PJD25N06A_L2_00001 Panjit International Inc.

Description: 60V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V, Power Dissipation (Max): 2W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V.

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PJD25N06A_L2_00001 PJD25N06A_L2_00001 Panjit International Inc. PJD25N06A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
auf Bestellung 4680 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.62 EUR
21+1.01 EUR
50+0.74 EUR
100+0.65 EUR
500+0.5 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N06A_L2_00001 PJD25N06A_L2_00001 Panjit 91E60674E9478B14E86DA67CE03065BBC616C61D5762E2C19E6D74A82DA41442.pdf MOSFETs 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 2071 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.67 EUR
10+1.01 EUR
100+0.7 EUR
500+0.51 EUR
1000+0.45 EUR
3000+0.36 EUR
Mindestbestellmenge: 2 Stücke
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PJD25N06A_L2_00001 PJD25N06A_L2_00001 PanJit PJD25N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 100A
Gate charge: 20nC
Kind of package: reel; tape
auf Bestellung 973 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N06A_L2_00001 PJD25N06A.pdf
PJD25N06A_L2_00001
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
auf Bestellung 4680 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.62 EUR
21+1.01 EUR
50+0.74 EUR
100+0.65 EUR
500+0.5 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N06A_L2_00001 91E60674E9478B14E86DA67CE03065BBC616C61D5762E2C19E6D74A82DA41442.pdf
PJD25N06A_L2_00001
Hersteller: Panjit
MOSFETs 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 2071 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+1.67 EUR
10+1.01 EUR
100+0.7 EUR
500+0.51 EUR
1000+0.45 EUR
3000+0.36 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N06A_L2_00001 PJD25N06A.pdf
PJD25N06A_L2_00001
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 100A
Gate charge: 20nC
Kind of package: reel; tape
auf Bestellung 973 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH