Produkte > PANJIT INTERNATIONAL INC. > PJD25N06A_L2_00001
PJD25N06A_L2_00001

PJD25N06A_L2_00001 Panjit International Inc.

PJD25N06A.pdf Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.33 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PJD25N06A_L2_00001 Panjit International Inc.

Description: 60V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V, Power Dissipation (Max): 2W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V.

Weitere Produktangebote PJD25N06A_L2_00001 nach Preis ab 0.22 EUR bis 1.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PJD25N06A_L2_00001 PJD25N06A_L2_00001 Hersteller : Panjit PJD25N06A-1867305.pdf MOSFETs 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 64912 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.04 EUR
10+0.70 EUR
100+0.49 EUR
500+0.43 EUR
1000+0.34 EUR
3000+0.32 EUR
9000+0.28 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N06A_L2_00001 PJD25N06A_L2_00001 Hersteller : Panjit International Inc. PJD25N06A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
auf Bestellung 5164 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
25+0.72 EUR
100+0.50 EUR
500+0.44 EUR
1000+0.37 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N06A_L2_00001 Hersteller : PanJit Semiconductor PJD25N06A.pdf PJD25N06A-L2 SMD N channel transistors
auf Bestellung 1662 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
103+0.70 EUR
291+0.25 EUR
309+0.23 EUR
3000+0.22 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH