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PJD35N06A_L2_00001

PJD35N06A_L2_00001 Panjit International Inc.

PJx35N06A.pdf Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
auf Bestellung 2560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
23+0.78 EUR
100+0.54 EUR
500+0.45 EUR
1000+0.4 EUR
Mindestbestellmenge: 16
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Technische Details PJD35N06A_L2_00001 Panjit International Inc.

Description: 60V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V, Power Dissipation (Max): 1.1W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V.

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PJD35N06A_L2_00001 PJD35N06A_L2_00001 Hersteller : Panjit PJx35N06A-1867570.pdf MOSFETs 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 2670 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.24 EUR
10+0.79 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.37 EUR
3000+0.3 EUR
9000+0.28 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PJD35N06A_L2_00001 PJD35N06A_L2_00001 Hersteller : Panjit International Inc. PJx35N06A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
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Im Einkaufswagen  Stück im Wert von  UAH
PJD35N06A-L2-00001 PJD35N06A-L2-00001 Hersteller : Panjit PJx35N06A-1867570.pdf MOSFETs TO252 N CHAN 60V
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Im Einkaufswagen  Stück im Wert von  UAH