| Anzahl | Preis |
|---|---|
| 3+ | 1.23 EUR |
| 10+ | 0.77 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.38 EUR |
| 3000+ | 0.29 EUR |
| 6000+ | 0.28 EUR |
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Technische Details PJD35N06A_L2_00001 Panjit
Description: 60V N-CHANNEL ENHANCEMENT MODE M, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.1W (Ta), 63W (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V.
Weitere Produktangebote PJD35N06A_L2_00001 nach Preis ab 0.38 EUR bis 1.25 EUR
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PJD35N06A_L2_00001 | Panjit International Inc. |
 Description: 60V N-CHANNEL ENHANCEMENT MODE MInput Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.1W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 1040 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJD35N06A_L2_00001 |
|
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.25 EUR |
| 23+ | 0.79 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.38 EUR |