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PJD35P03_L2_00001

PJD35P03_L2_00001 Panjit

PJD35P03-1867571.pdf Hersteller: Panjit
MOSFETs 30V P-Channel Enhancement Mode MOSFET
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3+1.09 EUR
10+0.73 EUR
100+0.50 EUR
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3000+0.29 EUR
9000+0.28 EUR
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Technische Details PJD35P03_L2_00001 Panjit

Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, Power Dissipation (Max): 2W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V.

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PJD35P03_L2_00001 PJD35P03_L2_00001 Hersteller : Panjit International Inc. PJD35P03.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V
auf Bestellung 1717 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
20+0.89 EUR
100+0.58 EUR
500+0.44 EUR
1000+0.40 EUR
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PJD35P03_L2_00001 Hersteller : PanJit Semiconductor PJD35P03.pdf PJD35P03-L2 SMD P channel transistors
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
103+0.70 EUR
295+0.24 EUR
313+0.23 EUR
3000+0.22 EUR
Mindestbestellmenge: 103
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PJD35P03_L2_00001 PJD35P03_L2_00001 Hersteller : Panjit International Inc. PJD35P03.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V
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PJD35P03-L2-00001 PJD35P03-L2-00001 Hersteller : Panjit PJD35P03-1867571.pdf MOSFET TO-252AA/MOS/TO/NFET-30SMP
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