| Anzahl | Preis |
|---|---|
| 3+ | 1.09 EUR |
| 10+ | 0.72 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.33 EUR |
| 6000+ | 0.25 EUR |
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Technische Details PJD35P03_L2_00001 Panjit
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 35W (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Weitere Produktangebote PJD35P03_L2_00001 nach Preis ab 0.4 EUR bis 1.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PJD35P03_L2_00001 | Panjit International Inc. |
 Description: 30V P-CHANNEL ENHANCEMENT MODE MInput Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 1717 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PJD35P03_L2_00001 |
|
Hersteller: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1717 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.44 EUR |
| 20+ | 0.89 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.4 EUR |