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PJD35P03_L2_00001

PJD35P03_L2_00001 PanJit Semiconductor

PJD35P03.pdf Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -140A
Drain current: -35A
Drain-source voltage: -30V
Gate charge: 11nC
On-state resistance: 30mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2503 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
100+0.72 EUR
150+0.48 EUR
218+0.33 EUR
250+0.29 EUR
500+0.26 EUR
1000+0.24 EUR
3000+0.22 EUR
Mindestbestellmenge: 100
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Technische Details PJD35P03_L2_00001 PanJit Semiconductor

Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, Power Dissipation (Max): 2W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V.

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PJD35P03_L2_00001 PJD35P03_L2_00001 Hersteller : PanJit Semiconductor PJD35P03.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -140A
Drain current: -35A
Drain-source voltage: -30V
Gate charge: 11nC
On-state resistance: 30mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
auf Bestellung 2503 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
150+0.48 EUR
218+0.33 EUR
250+0.29 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
PJD35P03_L2_00001 PJD35P03_L2_00001 Hersteller : Panjit 681BD72A85EBF119CE582E6C13D80F2DC46490695392CAA6D773E1090FA0BCA4.pdf MOSFETs 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 3017 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.09 EUR
10+0.72 EUR
100+0.49 EUR
500+0.39 EUR
1000+0.35 EUR
3000+0.33 EUR
6000+0.25 EUR
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PJD35P03_L2_00001 PJD35P03_L2_00001 Hersteller : Panjit International Inc. PJD35P03.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V
auf Bestellung 1717 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
20+0.89 EUR
100+0.58 EUR
500+0.44 EUR
1000+0.4 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PJD35P03_L2_00001 PJD35P03_L2_00001 Hersteller : Panjit International Inc. PJD35P03.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V
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PJD35P03-L2-00001 PJD35P03-L2-00001 Hersteller : Panjit PJD35P03-1867571.pdf MOSFET TO-252AA/MOS/TO/NFET-30SMP
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