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PJD40P03E-AU-L2 Panjit



Hersteller: Panjit
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Technische Details PJD40P03E-AU-L2 Panjit

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -33A; Idm: -94A; 17W; TO252AA, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -33A, Pulsed drain current: -94A, Power dissipation: 17W, Case: TO252AA, Gate-source voltage: ±25V, On-state resistance: 18.8mΩ, Mounting: SMD, Gate charge: 22nC, Kind of package: reel, Kind of channel: enhancement, Application: automotive industry.

Weitere Produktangebote PJD40P03E-AU-L2

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PJD40P03E-AU_L2_006A1 PanJit Semiconductor PJD40P03E-AU Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -33A; Idm: -94A; 17W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -33A
Pulsed drain current: -94A
Power dissipation: 17W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 18.8mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD40P03E-AU_L2_006A1 PJD40P03E-AU
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -33A; Idm: -94A; 17W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -33A
Pulsed drain current: -94A
Power dissipation: 17W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 18.8mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH