auf Bestellung 13666 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.18 EUR |
| 10+ | 1.03 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.51 EUR |
| 3000+ | 0.43 EUR |
| 6000+ | 0.42 EUR |
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Technische Details PJD45N06A_L2_00001 Panjit
Description: 60V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V.
Weitere Produktangebote PJD45N06A_L2_00001 nach Preis ab 0.31 EUR bis 1.2 EUR
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PJD45N06A_L2_00001 | Hersteller : Panjit International Inc. |
 Description: 60V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V |
auf Bestellung 1351 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJD45N06A_L2_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 45A Pulsed drain current: 180A Power dissipation: 63W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJD45N06A_L2_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 45A Pulsed drain current: 180A Power dissipation: 63W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJD45N06A_L2_00001 | Hersteller : Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V |
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