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PJD50N04V-AU_L2_002A1

PJD50N04V-AU_L2_002A1 Panjit International Inc.


PJD50N04V-AU.pdf Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PJD50N04V-AU_L2_002A1 Panjit International Inc.

Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V, Power Dissipation (Max): 3W (Ta), 68W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 50µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V, Qualification: AEC-Q101.

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PJD50N04V-AU_L2_002A1 PJD50N04V-AU_L2_002A1 Hersteller : Panjit PJD50N04V_AU-3395002.pdf MOSFETs 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.34 EUR
10+3.20 EUR
100+3.06 EUR
250+3.01 EUR
500+2.97 EUR
1000+2.90 EUR
3000+1.20 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PJD50N04V-AU_L2_002A1 PJD50N04V-AU_L2_002A1 Hersteller : Panjit International Inc. PJD50N04V-AU.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+3.16 EUR
100+3.01 EUR
500+2.85 EUR
1000+2.80 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH