auf Bestellung 2723 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.59 EUR |
10+ | 1.3 EUR |
100+ | 1.01 EUR |
500+ | 0.86 EUR |
1000+ | 0.73 EUR |
3000+ | 0.62 EUR |
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Technische Details PJD50N10AL-AU_L2_000A1 Panjit
Description: 100V N-CHANNEL ENHANCEMENT MODE, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V, Power Dissipation (Max): 2W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote PJD50N10AL-AU_L2_000A1 nach Preis ab 0.7 EUR bis 1.6 EUR
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PJD50N10AL-AU_L2_000A1 | Hersteller : Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 1297 Stücke: Lieferzeit 10-14 Tag (e) |
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PJD50N10AL-AU_L2_000A1 | Hersteller : Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 30 V Qualification: AEC-Q101 |
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