auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.43 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.61 EUR |
| 250+ | 1.49 EUR |
| 500+ | 1.35 EUR |
| 1000+ | 1.16 EUR |
| 3000+ | 1.10 EUR |
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Technische Details PJD55N04S-AU_L2_002A1 Panjit
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, Power Dissipation (Max): 3W (Ta), 71W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 50µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote PJD55N04S-AU_L2_002A1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| PJD55N04S-AU_L2_002A1 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 87A; Idm: 348A; 36W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 87A Power dissipation: 36W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 348A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PJD55N04S-AU_L2_002A1 | Hersteller : Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| PJD55N04S-AU_L2_002A1 | Hersteller : Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| PJD55N04S-AU_L2_002A1 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 87A; Idm: 348A; 36W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 87A Power dissipation: 36W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 348A |
Produkt ist nicht verfügbar |