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PJD55P03E-AU_L2_006A1

PJD55P03E-AU_L2_006A1 Panjit International Inc.

PJD55P03E-AU.pdf Hersteller: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.42 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PJD55P03E-AU_L2_006A1 Panjit International Inc.

Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 48A (Tc), Rds On (Max) @ Id, Vgs: 12.1mOhm @ 20A, 10V, Power Dissipation (Max): 3W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V, Qualification: AEC-Q101.

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PJD55P03E-AU_L2_006A1 PJD55P03E-AU_L2_006A1 Hersteller : Panjit PJD55P03E_AU-3385802.pdf MOSFETs 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.98 EUR
10+3.82 EUR
100+3.63 EUR
250+3.57 EUR
500+3.52 EUR
1000+3.45 EUR
3000+1.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PJD55P03E-AU_L2_006A1 PJD55P03E-AU_L2_006A1 Hersteller : Panjit International Inc. PJD55P03E-AU.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.79 EUR
10+3.09 EUR
100+2.12 EUR
500+1.71 EUR
1000+1.58 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PJD55P03E-AU_L2_006A1 Hersteller : PanJit Semiconductor PJD55P03E-AU.pdf PJD55P03E-AU-L2 SMD P channel transistors
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