| Anzahl | Preis |
|---|---|
| 2+ | 2.64 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 1.01 EUR |
| 3000+ | 0.87 EUR |
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Technische Details PJD60P04E-AU_L2_006A1 Panjit
Description: 40V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V, Power Dissipation (Max): 3W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote PJD60P04E-AU_L2_006A1 nach Preis ab 1.03 EUR bis 3.17 EUR
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PJD60P04E-AU_L2_006A1 | Panjit International Inc. |
 Description: 40V P-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1165 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJD60P04E-AU_L2_006A1 |
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Hersteller: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V
Qualification: AEC-Q101
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1165 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.17 EUR |
| 10+ | 2.02 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1.03 EUR |