| Anzahl | Preis |
|---|---|
| 1+ | 4.47 EUR |
| 10+ | 3.73 EUR |
| 100+ | 2.66 EUR |
| 500+ | 2.46 EUR |
| 1000+ | 2.32 EUR |
| 3000+ | 1.97 EUR |
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Technische Details PJD90P03E-AU_L2_006A1 Panjit
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3W (Ta), 79W (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote PJD90P03E-AU_L2_006A1 nach Preis ab 2.33 EUR bis 5.74 EUR
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PJD90P03E-AU_L2_006A1 | Panjit International Inc. |
 Description: 30V P-CHANNEL ENHANCEMENT MODE MRds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3W (Ta), 79W (Tc) |
auf Bestellung 2831 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJD90P03E-AU_L2_006A1 |
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Hersteller: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 79W (Tc)
auf Bestellung 2831 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.74 EUR |
| 10+ | 3.75 EUR |
| 100+ | 2.63 EUR |
| 500+ | 2.33 EUR |