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PJD90P03E-AU_L2_006A1

PJD90P03E-AU_L2_006A1 Panjit


PJD90P03E-AU.pdf Hersteller: Panjit
MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Technische Details PJD90P03E-AU_L2_006A1 Panjit

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -88A, Pulsed drain current: -219A, Power dissipation: 40W, Case: TO252AA, Gate-source voltage: ±25V, On-state resistance: 6.4mΩ, Mounting: SMD, Gate charge: 68nC, Kind of package: reel, Kind of channel: enhancement, Application: automotive industry.

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PJD90P03E-AU_L2_006A1 Hersteller : PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -88A
Pulsed drain current: -219A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
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