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| Anzahl | Preis |
|---|---|
| 1+ | 4.36 EUR |
| 10+ | 3.73 EUR |
| 100+ | 2.8 EUR |
| 500+ | 2.59 EUR |
| 1000+ | 2.32 EUR |
| 3000+ | 1.97 EUR |
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Technische Details PJD90P03E-AU_L2_006A1 Panjit
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -88A, Pulsed drain current: -219A, Power dissipation: 40W, Case: TO252AA, Gate-source voltage: ±25V, On-state resistance: 6.4mΩ, Mounting: SMD, Gate charge: 68nC, Kind of package: reel, Kind of channel: enhancement, Application: automotive industry.
Weitere Produktangebote PJD90P03E-AU_L2_006A1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| PJD90P03E-AU_L2_006A1 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -88A Pulsed drain current: -219A Power dissipation: 40W Case: TO252AA Gate-source voltage: ±25V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel Kind of channel: enhancement Application: automotive industry |
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