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PJD9P06A-AU_L2_000A1

PJD9P06A-AU_L2_000A1 Panjit International Inc.


PJD9P06A-AU.pdf Hersteller: Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
auf Bestellung 2616 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+0.99 EUR
21+ 0.87 EUR
100+ 0.66 EUR
500+ 0.53 EUR
1000+ 0.42 EUR
Mindestbestellmenge: 18
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Technische Details PJD9P06A-AU_L2_000A1 Panjit International Inc.

Description: 60V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 3.5A, 10V, Power Dissipation (Max): 2W (Ta), 15.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V.

Weitere Produktangebote PJD9P06A-AU_L2_000A1 nach Preis ab 0.39 EUR bis 1.03 EUR

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Preis ohne MwSt
PJD9P06A-AU_L2_000A1 PJD9P06A-AU_L2_000A1 Hersteller : Panjit PJD9P06A-AU-1867808.pdf MOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.03 EUR
10+ 0.91 EUR
100+ 0.7 EUR
500+ 0.55 EUR
1000+ 0.44 EUR
3000+ 0.4 EUR
6000+ 0.39 EUR
Mindestbestellmenge: 3
PJD9P06A-AU_L2_000A1 PJD9P06A-AU_L2_000A1 Hersteller : Panjit International Inc. PJD9P06A-AU.pdf Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
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