PJE28VM2TS_R1_00001 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
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Technische Details PJE28VM2TS_R1_00001 PanJit Semiconductor
Category: Protection diodes - arrays, Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1, Type of diode: TVS, Case: SOD523, Mounting: SMD, Max. off-state voltage: 28V, Semiconductor structure: unidirectional, Capacitance: 25pF, Leakage current: 0.5µA, Max. forward impulse current: 3A, Number of channels: 1, Breakdown voltage: 29V, Peak pulse power dissipation: 0.165kW.