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PJGBLC03C-AU-R1 Panjit


PJGBLC03-AU_C24C-AU_SERIES-1876104.pdf
Hersteller: Panjit
ESD Protection Diodes / TVS Diodes SOD-323/TVS/ESD/SOD/TEA-04A42
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Technische Details PJGBLC03C-AU-R1 Panjit

Category: Protection diodes - arrays, Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1, Type of diode: TVS array, Breakdown voltage: 4.75...5.25V, Max. forward impulse current: 1A, Peak pulse power dissipation: 0.35kW, Semiconductor structure: bidirectional, Mounting: SMD, Case: SOD323, Max. off-state voltage: 3.3V, Leakage current: 20µA, Number of channels: 1, Kind of package: reel; tape, Capacitance: 3pF, Version: ESD, Application: automotive industry.

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Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PJGBLC03C-AU_R1_000A1 PJGBLC03C-AU_R1_000A1 PanJit Semiconductor PJGBLC24C-AU Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 3pF
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJGBLC03C-AU_R1_000A1 PJGBLC24C-AU
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 3pF
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH