PJMB210N65EC_R2_00601 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 650V/ 390MOHM / 10A/ EASY TO DRI
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V
auf Bestellung 740 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.29 EUR |
| 10+ | 3.00 EUR |
| 100+ | 2.08 EUR |
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Technische Details PJMB210N65EC_R2_00601 Panjit International Inc.
Description: 650V/ 390MOHM / 10A/ EASY TO DRI, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V.
Weitere Produktangebote PJMB210N65EC_R2_00601 nach Preis ab 1.59 EUR bis 4.35 EUR
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PJMB210N65EC_R2_00601 | Hersteller : Panjit |
MOSFETs 650V 390mohm 10A Easy to driver SJ MOSFET |
auf Bestellung 460 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJMB210N65EC_R2_00601 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 34nC Pulsed drain current: 42A Anzahl je Verpackung: 1 Stücke |
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PJMB210N65EC_R2_00601 | Hersteller : Panjit International Inc. |
Description: 650V/ 390MOHM / 10A/ EASY TO DRI Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V |
Produkt ist nicht verfügbar |
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| PJMB210N65EC_R2_00601 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 34nC Pulsed drain current: 42A |
Produkt ist nicht verfügbar |