PJMBZ12A-AU_R1_007A1 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: Protection diodes - arrays
Description: Diode: TVS array; 11.4÷12.6V; 40W; double,common anode; SOT23
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: automotive industry
Max. off-state voltage: 8.5V
Breakdown voltage: 11.4...12.6V
Leakage current: 0.2µA
Version: ESD
Peak pulse power dissipation: 40W
Anzahl je Verpackung: 1 Stücke
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Technische Details PJMBZ12A-AU_R1_007A1 PanJit Semiconductor
Category: Protection diodes - arrays, Description: Diode: TVS array; 11.4÷12.6V; 40W; double,common anode; SOT23, Type of diode: TVS array, Mounting: SMD, Kind of package: reel; tape, Case: SOT23, Semiconductor structure: common anode; double, Application: automotive industry, Max. off-state voltage: 8.5V, Breakdown voltage: 11.4...12.6V, Leakage current: 0.2µA, Version: ESD, Peak pulse power dissipation: 40W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PJMBZ12A-AU_R1_007A1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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PJMBZ12A-AU_R1_007A1 | Hersteller : Panjit |
ESD Protection Diodes / TVS Diodes ESD,8.5V,Uni,2CH |
Produkt ist nicht verfügbar |
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| PJMBZ12A-AU_R1_007A1 | Hersteller : PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 11.4÷12.6V; 40W; double,common anode; SOT23 Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double Application: automotive industry Max. off-state voltage: 8.5V Breakdown voltage: 11.4...12.6V Leakage current: 0.2µA Version: ESD Peak pulse power dissipation: 40W |
Produkt ist nicht verfügbar |