Technische Details PJMBZ12A-AU_R1_007A1 Panjit
Category: Protection diodes - arrays, Description: Diode: TVS array; 11.4÷12.6V; 40W; double,common anode; SOT23, Type of diode: TVS array, Mounting: SMD, Kind of package: reel; tape, Case: SOT23, Semiconductor structure: common anode; double, Leakage current: 0.2µA, Max. off-state voltage: 8.5V, Breakdown voltage: 11.4...12.6V, Peak pulse power dissipation: 40W, Application: automotive industry, Version: ESD.
Weitere Produktangebote PJMBZ12A-AU_R1_007A1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| PJMBZ12A-AU_R1_007A1 | Hersteller : PanJit Semiconductor |
 Category: Protection diodes - arraysDescription: Diode: TVS array; 11.4÷12.6V; 40W; double,common anode; SOT23 Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double Leakage current: 0.2µA Max. off-state voltage: 8.5V Breakdown voltage: 11.4...12.6V Peak pulse power dissipation: 40W Application: automotive industry Version: ESD |
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