Produkte > PANJIT SEMICONDUCTOR > PJMBZ27V_R1_00501

PJMBZ27V_R1_00501 PanJit Semiconductor

Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 28.35V; 4A; 0.15kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 28.35V
Max. forward impulse current: 4A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 22V
Leakage current: 50nA
Number of channels: 2
Capacitance: 50pF

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Technische Details PJMBZ27V_R1_00501 PanJit Semiconductor

Category: Protection diodes - arrays, Description: Diode: TVS; 28.35V; 4A; 0.15kW; unidirectional; SOT23; Ch: 2, Type of diode: TVS, Breakdown voltage: 28.35V, Max. forward impulse current: 4A, Peak pulse power dissipation: 0.15kW, Semiconductor structure: unidirectional, Mounting: SMD, Case: SOT23, Max. off-state voltage: 22V, Leakage current: 50nA, Number of channels: 2, Capacitance: 50pF.