PJMBZ9V1A-AU_R1_007A1 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: Protection diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Case: SOT23
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Breakdown voltage: 8.65...9.56V
Leakage current: 0.3µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 24W
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
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Technische Details PJMBZ9V1A-AU_R1_007A1 PanJit Semiconductor
Category: Protection diodes - arrays, Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23, Case: SOT23, Max. off-state voltage: 6V, Semiconductor structure: common anode; double, Breakdown voltage: 8.65...9.56V, Leakage current: 0.3µA, Application: automotive industry, Kind of package: reel; tape, Type of diode: TVS array, Version: ESD, Peak pulse power dissipation: 24W, Mounting: SMD, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PJMBZ9V1A-AU_R1_007A1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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PJMBZ9V1A-AU_R1_007A1 | Hersteller : Panjit |
ESD Protection Diodes / TVS Diodes ESD,6V,Uni,2CH |
Produkt ist nicht verfügbar |
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| PJMBZ9V1A-AU_R1_007A1 | Hersteller : PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23 Case: SOT23 Max. off-state voltage: 6V Semiconductor structure: common anode; double Breakdown voltage: 8.65...9.56V Leakage current: 0.3µA Application: automotive industry Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 24W Mounting: SMD |
Produkt ist nicht verfügbar |