PJMD190N65FR2_L2_00601 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 650V/ 180M / FAST RECOVERY QRR/
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 7A, 10V
Power Dissipation (Max): 168.8W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 34.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1492 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.59 EUR |
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Technische Details PJMD190N65FR2_L2_00601 Panjit International Inc.
Description: 650V/ 180M / FAST RECOVERY QRR/, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 7A, 10V, Power Dissipation (Max): 168.8W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 34.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1492 pF @ 400 V.
Weitere Produktangebote PJMD190N65FR2_L2_00601 nach Preis ab 1.71 EUR bis 5.30 EUR
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PJMD190N65FR2_L2_00601 | Hersteller : Panjit International Inc. |
Description: 650V/ 180M / FAST RECOVERY QRR/ Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 7A, 10V Power Dissipation (Max): 168.8W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 34.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1492 pF @ 400 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD190N65FR2_L2_00601 | Hersteller : Panjit |
MOSFETs 650V/ 180m ohms / Fast Recovery Qrr/trr SJ MOSFET |
Produkt ist nicht verfügbar |