Produkte > PANJIT > PJMD360N60EC-L2

PJMD360N60EC-L2 Panjit



Hersteller: Panjit
MOSFETs TO252 600V 11A N-CH
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Technische Details PJMD360N60EC-L2 Panjit

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 11A, Pulsed drain current: 23A, Power dissipation: 87.5W, Case: TO252AA, Gate-source voltage: ±30V, On-state resistance: 0.36Ω, Mounting: SMD, Gate charge: 18.7nC, Kind of package: reel; tape, Kind of channel: enhancement.

Weitere Produktangebote PJMD360N60EC-L2

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PJMD360N60EC_L2_00001 PJMD360N60EC_L2_00001 PanJit Semiconductor PJMD360N60EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMD360N60EC_L2_00001 PJMD360N60EC.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH