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PJMD360N60EC-L2 Panjit



Hersteller: Panjit
MOSFETs TO252 600V 11A N-CH
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Technische Details PJMD360N60EC-L2 Panjit

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA, Type of transistor: N-MOSFET, Power dissipation: 87.5W, Case: TO252AA, Mounting: SMD, Kind of package: reel; tape, Drain-source voltage: 600V, Gate-source voltage: ±30V, On-state resistance: 0.36Ω, Pulsed drain current: 23A, Gate charge: 18.7nC, Polarisation: unipolar, Drain current: 11A, Kind of channel: enhancement.

Weitere Produktangebote PJMD360N60EC-L2

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PJMD360N60EC_L2_00001 PJMD360N60EC_L2_00001 PanJit PJMD360N60EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Pulsed drain current: 23A
Gate charge: 18.7nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMD360N60EC_L2_00001 PJMD360N60EC.pdf
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Pulsed drain current: 23A
Gate charge: 18.7nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH