PJMF060N65FR2_T0_00601 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 650V/ 60M / FAST RECOVERY QRR/T
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 4.7V @ 250µA
Supplier Device Package: ITO-220AB-F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 100.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4614 pF @ 400 V
Current - Continuous Drain (Id) @ 25°C: 48.3A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 23A, 10V
Power Dissipation (Max): 343.4W (Tc)
auf Bestellung 1994 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.86 EUR |
| 50+ | 5.24 EUR |
| 100+ | 4.8 EUR |
| 500+ | 4.02 EUR |
| 1000+ | 3.95 EUR |
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Technische Details PJMF060N65FR2_T0_00601 Panjit International Inc.
Description: 650V/ 60M / FAST RECOVERY QRR/T, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Vgs(th) (Max) @ Id: 4.7V @ 250µA, Supplier Device Package: ITO-220AB-F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 100.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4614 pF @ 400 V, Current - Continuous Drain (Id) @ 25°C: 48.3A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 23A, 10V, Power Dissipation (Max): 343.4W (Tc).
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PJMF060N65FR2_T0_00601 | Hersteller : Panjit |
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 48.3A; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 48.3A Case: ITO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
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