PJMF099N60EC_T0_00601 Panjit
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.11 EUR |
| 10+ | 4.86 EUR |
| 100+ | 4.07 EUR |
| 500+ | 3.87 EUR |
| 1000+ | 3.64 EUR |
| 2500+ | 3.57 EUR |
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Technische Details PJMF099N60EC_T0_00601 Panjit
Description: 600V/ 99M / 39A/ EASY TO DRIVER, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB-F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V.
Weitere Produktangebote PJMF099N60EC_T0_00601 nach Preis ab 6.46 EUR bis 8.08 EUR
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PJMF099N60EC_T0_00601 | Hersteller : Panjit International Inc. |
 Description: 600V/ 99M / 39A/ EASY TO DRIVERPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V |
auf Bestellung 1978 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJMF099N60EC_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Power dissipation: 14W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 88A Gate charge: 60nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PJMF099N60EC_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Power dissipation: 14W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 88A Gate charge: 60nC |
Produkt ist nicht verfügbar |