auf Bestellung 827 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.65 EUR |
| 10+ | 8.66 EUR |
| 100+ | 6.37 EUR |
| 500+ | 5.7 EUR |
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Technische Details PJMF120N60EC_T0_00001 Panjit
Description: 600V SUPER JUNCTION MOSFET, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V.
Weitere Produktangebote PJMF120N60EC_T0_00001 nach Preis ab 5.6 EUR bis 13.06 EUR
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PJMF120N60EC_T0_00001 | Hersteller : Panjit International Inc. |
 Description: 600V SUPER JUNCTION MOSFETPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V |
auf Bestellung 1997 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF120N60EC_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB Case: ITO220AB Mounting: THT Kind of package: tube Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Power dissipation: 33W Polarisation: unipolar Gate charge: 51nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 69A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PJMF120N60EC_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB Case: ITO220AB Mounting: THT Kind of package: tube Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Power dissipation: 33W Polarisation: unipolar Gate charge: 51nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 69A |
Produkt ist nicht verfügbar |