auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 10.88 EUR |
| 10+ | 9.31 EUR |
| 25+ | 8.45 EUR |
| 100+ | 7.78 EUR |
| 250+ | 7.32 EUR |
| 500+ | 6.86 EUR |
| 1000+ | 6.49 EUR |
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Technische Details PJMF130N65EC_T0_00001 Panjit
Description: 650V SUPER JUNCTION MOSFET, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 10.8A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V.
Weitere Produktangebote PJMF130N65EC_T0_00001 nach Preis ab 6.2 EUR bis 10.95 EUR
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PJMF130N65EC_T0_00001 | Hersteller : Panjit International Inc. |
 Description: 650V SUPER JUNCTION MOSFETPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 10.8A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V |
auf Bestellung 1976 Stücke: Lieferzeit 10-14 Tag (e) |
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