PJMF190N60E1_T0_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 600V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
auf Bestellung 1931 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.63 EUR |
| 10+ | 3.88 EUR |
| 100+ | 3.14 EUR |
| 500+ | 2.79 EUR |
| 1000+ | 2.39 EUR |
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Technische Details PJMF190N60E1_T0_00001 Panjit International Inc.
Description: 600V SUPER JUNCITON MOSFET, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V.
Weitere Produktangebote PJMF190N60E1_T0_00001 nach Preis ab 2.6 EUR bis 4.72 EUR
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PJMF190N60E1_T0_00001 | Hersteller : Panjit |
MOSFET 22V,ESD Protection,SOT-23,UNI |
auf Bestellung 1982 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJMF190N60E1_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 60A Power dissipation: 38W Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PJMF190N60E1_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 60A Power dissipation: 38W Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |