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PJMF190N60E1_T0_00001

PJMF190N60E1_T0_00001 Panjit

PJMF190N60E1-2492185.pdf Hersteller: Panjit
MOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 1979 Stücke:
Lieferzeit 10-14 Tag (e)
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1+4.72 EUR
10+3.96 EUR
25+3.75 EUR
100+3.20 EUR
250+3.03 EUR
500+2.85 EUR
1000+2.60 EUR
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Technische Details PJMF190N60E1_T0_00001 Panjit

Description: 600V SUPER JUNCITON MOSFET, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V.

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PJMF190N60E1_T0_00001 PJMF190N60E1_T0_00001 Hersteller : Panjit International Inc. PJMF190N60E1.pdf Description: 600V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
auf Bestellung 1926 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.44 EUR
50+2.98 EUR
100+2.72 EUR
500+2.28 EUR
1000+2.20 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PJMF190N60E1_T0_00001 Hersteller : PanJit Semiconductor PJMF190N60E1.pdf PJMF190N60E1-T0 THT N channel transistors
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