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PJMF390N65EC_T0_00001

PJMF390N65EC_T0_00001 PanJit Semiconductor


PJMF390N65EC.pdf Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB
Kind of channel: enhancement
Mounting: THT
Case: ITO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 19nC
On-state resistance: 390mΩ
Drain current: 10A
Gate-source voltage: ±30V
Pulsed drain current: 22A
Power dissipation: 29.5W
Drain-source voltage: 650V
auf Bestellung 100 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.67 EUR
59+1.22 EUR
64+1.13 EUR
100+1.1 EUR
Mindestbestellmenge: 43
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Technische Details PJMF390N65EC_T0_00001 PanJit Semiconductor

Description: 650V SUPER JUNCTION MOSFET, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V, Power Dissipation (Max): 29.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V.

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PJMF390N65EC_T0_00001 PJMF390N65EC_T0_00001 Hersteller : Panjit PJMF390N65EC.pdf MOSFETs 22V,ESD Protection,SOT-23,UNI
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10+2.9 EUR
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PJMF390N65EC_T0_00001 PJMF390N65EC_T0_00001 Hersteller : Panjit International Inc. PJMF390N65EC.pdf Description: 650V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 29.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
auf Bestellung 1785 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.49 EUR
10+3.25 EUR
100+2.42 EUR
500+2.39 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH