PJMF390N65EC_T0_00001 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 29.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 43+ | 1.67 EUR |
| 59+ | 1.22 EUR |
| 64+ | 1.13 EUR |
| 100+ | 1.1 EUR |
| 250+ | 1.03 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.96 EUR |
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Technische Details PJMF390N65EC_T0_00001 PanJit Semiconductor
Description: 650V SUPER JUNCTION MOSFET, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V, Power Dissipation (Max): 29.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V.
Weitere Produktangebote PJMF390N65EC_T0_00001 nach Preis ab 0.9 EUR bis 2.92 EUR
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PJMF390N65EC_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 29.5W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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PJMF390N65EC_T0_00001 | Hersteller : Panjit International Inc. |
Description: 650V SUPER JUNCTION MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V Power Dissipation (Max): 29.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V |
auf Bestellung 1575 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF390N65EC_T0_00001 | Hersteller : Panjit |
MOSFETs 22V,ESD Protection,SOT-23,UNI |
auf Bestellung 733 Stücke: Lieferzeit 10-14 Tag (e) |
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