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PJMF580N60E1_T0_00001

PJMF580N60E1_T0_00001 Panjit International Inc.

PJMF580N60E1.pdf
Hersteller: Panjit International Inc.
Description: 600V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 400 V
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.09 EUR
50+1.46 EUR
100+1.31 EUR
500+1.02 EUR
1000+0.94 EUR
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Technische Details PJMF580N60E1_T0_00001 Panjit International Inc.

Description: 600V SUPER JUNCITON MOSFET, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 400 V.

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PJMF580N60E1_T0_00001 PJMF580N60E1_T0_00001 Panjit PJMF580N60E1.pdf MOSFETs 22V,ESD Protection,SOT-23,UNI
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PJMF580N60E1_T0_00001 PJMF580N60E1_T0_00001 PanJit Semiconductor PJMF580N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Case: ITO220AB
Mounting: THT
Kind of package: tube
Pulsed drain current: 24A
Power dissipation: 28W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF580N60E1_T0_00001 PJMF580N60E1.pdf
PJMF580N60E1_T0_00001
Hersteller: Panjit
MOSFETs 22V,ESD Protection,SOT-23,UNI
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJMF580N60E1_T0_00001 PJMF580N60E1.pdf
PJMF580N60E1_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Case: ITO220AB
Mounting: THT
Kind of package: tube
Pulsed drain current: 24A
Power dissipation: 28W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH