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PJMF900N65E1_T0_00001

PJMF900N65E1_T0_00001 Panjit International Inc.


Hersteller: Panjit International Inc.
Description: 650V/ 900MOHM SUPER JUNCTION EAS
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 25.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 400 V
auf Bestellung 1965 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.31 EUR
10+ 1.89 EUR
100+ 1.47 EUR
500+ 1.24 EUR
1000+ 1.01 EUR
Mindestbestellmenge: 8
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Technische Details PJMF900N65E1_T0_00001 Panjit International Inc.

Description: 650V/ 900MOHM SUPER JUNCTION EAS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V, Power Dissipation (Max): 25.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 400 V.