auf Bestellung 1950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.43 EUR |
| 10+ | 2.87 EUR |
| 100+ | 2.27 EUR |
| 250+ | 2.09 EUR |
| 500+ | 1.92 EUR |
| 1000+ | 1.74 EUR |
| 2000+ | 1.5 EUR |
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Technische Details PJMF990N65EC_T0_00001 Panjit
Description: 650V SUPER JUNCITON MOSFET, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V, Power Dissipation (Max): 22.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V.
Weitere Produktangebote PJMF990N65EC_T0_00001 nach Preis ab 1.58 EUR bis 3.5 EUR
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PJMF990N65EC_T0_00001 | Hersteller : Panjit International Inc. |
 Description: 650V SUPER JUNCITON MOSFETPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V Power Dissipation (Max): 22.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJMF990N65EC_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W Drain-source voltage: 650V Drain current: 4.7A On-state resistance: 990mΩ Type of transistor: N-MOSFET Power dissipation: 22.5W Polarisation: unipolar Kind of package: tube Gate charge: 9.7nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 9.5A Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PJMF990N65EC_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W Drain-source voltage: 650V Drain current: 4.7A On-state resistance: 990mΩ Type of transistor: N-MOSFET Power dissipation: 22.5W Polarisation: unipolar Kind of package: tube Gate charge: 9.7nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 9.5A Mounting: THT |
Produkt ist nicht verfügbar |