auf Bestellung 1482 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.93 EUR |
| 10+ | 4.1 EUR |
| 120+ | 3.68 EUR |
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Technische Details PJMH120N60EC_T0_00601 Panjit
Description: 600V/ 120MOHM / 30A/ EASY TO DRI, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V, Power Dissipation (Max): 235W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V.
Weitere Produktangebote PJMH120N60EC_T0_00601 nach Preis ab 3.54 EUR bis 7.71 EUR
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PJMH120N60EC_T0_00601 | Hersteller : Panjit International Inc. |
 Description: 600V/ 120MOHM / 30A/ EASY TO DRIPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V |
auf Bestellung 1788 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMH120N60EC_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PJMH120N60EC_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
Produkt ist nicht verfügbar |