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PJMH120N60EC_T0_00601

PJMH120N60EC_T0_00601 Panjit International Inc.


PJMH120N60EC.pdf Hersteller: Panjit International Inc.
Description: 600V/ 120MOHM / 30A/ EASY TO DRI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V
auf Bestellung 1790 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.04 EUR
10+4.59 EUR
30+4.17 EUR
120+3.79 EUR
270+3.62 EUR
510+3.61 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PJMH120N60EC_T0_00601 Panjit International Inc.

Description: 600V/ 120MOHM / 30A/ EASY TO DRI, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V, Power Dissipation (Max): 235W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V.

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PJMH120N60EC_T0_00601 PJMH120N60EC_T0_00601 Hersteller : Panjit PJMH120N60EC-3049517.pdf MOSFETs 600V 120mohm 30A Easy to driver SJ MOSFET
auf Bestellung 1482 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.55 EUR
10+4.98 EUR
30+4.52 EUR
120+4.07 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PJMH120N60EC_T0_00601 PJMH120N60EC_T0_00601 Hersteller : PanJit Semiconductor PJMH120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Case: TO247AD-3
Type of transistor: N-MOSFET
Power dissipation: 235W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH120N60EC_T0_00601 PJMH120N60EC_T0_00601 Hersteller : PanJit Semiconductor PJMH120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Case: TO247AD-3
Type of transistor: N-MOSFET
Power dissipation: 235W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH