PJMH120N60EC_T0_00601 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 600V/ 120MOHM / 30A/ EASY TO DRI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V
auf Bestellung 1788 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 5.91 EUR |
| 10+ | 4.5 EUR |
| 30+ | 4.08 EUR |
| 120+ | 3.71 EUR |
| 270+ | 3.55 EUR |
| 510+ | 3.53 EUR |
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Technische Details PJMH120N60EC_T0_00601 Panjit International Inc.
Description: 600V/ 120MOHM / 30A/ EASY TO DRI, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V, Power Dissipation (Max): 235W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V.
Weitere Produktangebote PJMH120N60EC_T0_00601 nach Preis ab 3.68 EUR bis 5.93 EUR
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PJMH120N60EC_T0_00601 | Hersteller : Panjit |
MOSFETs 600V 120mohm 30A Easy to driver SJ MOSFET |
auf Bestellung 1482 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMH120N60EC_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3 Case: TO247AD-3 Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate-source voltage: ±30V Gate charge: 51nC On-state resistance: 0.12Ω Drain current: 30A Pulsed drain current: 69A Power dissipation: 235W Drain-source voltage: 600V Kind of channel: enhancement Mounting: THT |
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