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PJMH190N60E1_T0_00601

PJMH190N60E1_T0_00601 Panjit

PJMH190N60E1.pdf Hersteller: Panjit
MOSFETs 600V 190mohm 20.6A Easy to driver SJ MOSFET
auf Bestellung 1439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.08 EUR
10+2.8 EUR
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Technische Details PJMH190N60E1_T0_00601 Panjit

Description: 600V/ 190MOHM / 20.6A/ EASY TO D, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TO-247AD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V.

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PJMH190N60E1_T0_00601 PJMH190N60E1_T0_00601 Hersteller : Panjit International Inc. PJMH190N60E1.pdf Description: 600V/ 190MOHM / 20.6A/ EASY TO D
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
auf Bestellung 1401 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.64 EUR
10+4.95 EUR
30+4.13 EUR
120+3.38 EUR
270+3.05 EUR
510+2.83 EUR
1020+2.64 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PJMH190N60E1_T0_00601 PJMH190N60E1_T0_00601 Hersteller : PanJit Semiconductor PJMH190N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 62A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 160W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
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