PJMP190N65FR2_T0_00601 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 650V/ 180M / FAST RECOVERY QRR/
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 7A, 10V
Power Dissipation (Max): 168.8W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 250µA
Supplier Device Package: TO-220AB-L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 34.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1492 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.03 EUR |
| 50+ | 2.52 EUR |
| 100+ | 2.28 EUR |
| 500+ | 1.85 EUR |
| 1000+ | 1.72 EUR |
| 2000+ | 1.6 EUR |
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Technische Details PJMP190N65FR2_T0_00601 Panjit International Inc.
Description: 650V/ 180M / FAST RECOVERY QRR/, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 7A, 10V, Power Dissipation (Max): 168.8W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 250µA, Supplier Device Package: TO-220AB-L, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 34.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1492 pF @ 400 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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PJMP190N65FR2_T0_00601 | Hersteller : Panjit |
MOSFETs 650V/ 180m ohms / Fast Recovery Qrr/trr SJ MOSFET |
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