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PJMP210N65EC-T0 Panjit



Hersteller: Panjit
MOSFETs TO220 650V 19A N-CH SJUNC
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Technische Details PJMP210N65EC-T0 Panjit

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 19A, Power dissipation: 150W, Case: TO220AB, Gate-source voltage: ±30V, On-state resistance: 0.21Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Pulsed drain current: 42A, Gate charge: 34nC.

Weitere Produktangebote PJMP210N65EC-T0

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PJMP210N65EC_T0_00601 PJMP210N65EC_T0_00601 PanJit Semiconductor PJMP210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMP210N65EC_T0_00601 PJMP210N65EC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH