Produkte > PANJIT > PJMP360N60EC-T0

PJMP360N60EC-T0 Panjit



Hersteller: Panjit
MOSFETs TO220 600V 11A N-CH
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Technische Details PJMP360N60EC-T0 Panjit

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 11A, Pulsed drain current: 23A, Power dissipation: 87.5W, Case: TO220AB, Gate-source voltage: ±30V, On-state resistance: 0.36Ω, Mounting: THT, Gate charge: 18.7nC, Kind of package: tube, Kind of channel: enhancement.

Weitere Produktangebote PJMP360N60EC-T0

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PJMP360N60EC_T0_00001 PJMP360N60EC_T0_00001 PanJit Semiconductor PJMP360N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMP360N60EC_T0_00001 PJMP360N60EC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH