PJP18N20_T0_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: TO-220AB, MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V
auf Bestellung 8102 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.13 EUR |
| 50+ | 1.51 EUR |
| 100+ | 1.35 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.98 EUR |
| 2000+ | 0.9 EUR |
| 5000+ | 0.82 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PJP18N20_T0_00001 Panjit International Inc.
Description: TO-220AB, MOSFET, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V.
Weitere Produktangebote PJP18N20_T0_00001
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
PJP18N20_T0_00001 | Hersteller : Panjit |
MOSFETs 200V N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
|
|
|
PJP18N20-T0-00001 | Hersteller : Panjit |
MOSFETs |
Produkt ist nicht verfügbar |