PJP4NA65H_T0_00001 Panjit International Inc.

Description: 650V N-CHANNEL MOSFET, Part Status: Not For New Designs, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 44W (Tc), Rds On (Max) @ Id, Vgs: 3.75Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.