PJQ1905_R1_00201 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 0.5A; Idm: 1A; 500mW; DFN1006-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 0.5A; Idm: 1A; 500mW; DFN1006-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details PJQ1905_R1_00201 PanJit Semiconductor
Category: SMD N channel transistors, Description: Transistor: P-MOSFET; unipolar; 60V; 0.5A; Idm: 1A; 500mW; DFN1006-3, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.5A, Pulsed drain current: 1A, Power dissipation: 0.5W, Case: DFN1006-3, Gate-source voltage: ±20V, On-state resistance: 13Ω, Mounting: SMD, Gate charge: 1.1nC, Kind of package: reel; tape, Kind of channel: enhancement.