Technische Details PJQ1908-AU-R1-002A1 Panjit
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 50V, Drain current: 0.5A, Pulsed drain current: 1.2A, Power dissipation: 0.9W, Case: DFN1006-3, Gate-source voltage: ±20V, On-state resistance: 1.45Ω, Mounting: SMD, Gate charge: 0.95nC, Kind of package: reel; tape, Kind of channel: enhancement, Application: automotive industry.
Weitere Produktangebote PJQ1908-AU-R1-002A1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| PJQ1908-AU_R1_002A1 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.9W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 1.45Ω Mounting: SMD Gate charge: 0.95nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
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