| Anzahl | Preis |
|---|---|
| 7+ | 0.42 EUR |
| 11+ | 0.26 EUR |
| 100+ | 0.16 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
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Technische Details PJQ1916_R1_00201 Panjit
Description: 20V N-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Supplier Device Package: DFN1006-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 950mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote PJQ1916_R1_00201 nach Preis ab 0.13 EUR bis 0.51 EUR
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PJQ1916_R1_00201 | Panjit International Inc. |
 Description: 20V N-CHANNEL ENHANCEMENT MODE MInput Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Supplier Device Package: DFN1006-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Cut Tape (CT) |
auf Bestellung 8976 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ1916_R1_00201 |
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Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
auf Bestellung 8976 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 35+ | 0.51 EUR |
| 52+ | 0.34 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| 2000+ | 0.15 EUR |
| 5000+ | 0.13 EUR |