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PJQ1916_R1_00201

PJQ1916_R1_00201 Panjit International Inc.

PJQ1916.pdf Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
auf Bestellung 8976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
52+0.34 EUR
100+0.23 EUR
500+0.18 EUR
1000+0.16 EUR
2000+0.15 EUR
5000+0.13 EUR
Mindestbestellmenge: 35
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Technische Details PJQ1916_R1_00201 Panjit International Inc.

Description: 20V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 950mA (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V.

Weitere Produktangebote PJQ1916_R1_00201 nach Preis ab 0.12 EUR bis 0.69 EUR

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PJQ1916_R1_00201 PJQ1916_R1_00201 Hersteller : Panjit PNJI_S_A0010991292_1-2576244.pdf MOSFETs 20V N-Channel Enhancement Mode MOSFET
auf Bestellung 9295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.69 EUR
10+0.52 EUR
100+0.32 EUR
1000+0.17 EUR
2500+0.15 EUR
10000+0.13 EUR
20000+0.12 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
PJQ1916_R1_00201 PJQ1916_R1_00201 Hersteller : Panjit International Inc. PJQ1916.pdf Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
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Im Einkaufswagen  Stück im Wert von  UAH