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PJQ2416_R1_00001

PJQ2416_R1_00001 Panjit International Inc.

PJQ2416.pdf
Hersteller: Panjit International Inc.
Description: DFN2020B-6L, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1177 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
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Technische Details PJQ2416_R1_00001 Panjit International Inc.

Description: DFN2020B-6L, MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1177 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: DFN2020B-6, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 9.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).

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PJQ2416_R1_00001 PJQ2416_R1_00001 Panjit International Inc. PJQ2416.pdf Description: DFN2020B-6L, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1177 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ2416_R1_00001 PJQ2416_R1_00001 Panjit PJQ2416-1867696.pdf MOSFET 20V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ2416_R1_00001 PJQ2416.pdf
PJQ2416_R1_00001
Hersteller: Panjit International Inc.
Description: DFN2020B-6L, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1177 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN2020B-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ2416_R1_00001 PJQ2416-1867696.pdf
PJQ2416_R1_00001
Hersteller: Panjit
MOSFET 20V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH