PJQ2460-AU_R1_000A1 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 12.8A; 2.4W
Mounting: SMD
Pulsed drain current: 12.8A
Power dissipation: 2.4W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 3.2A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 90mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 12.8A; 2.4W
Mounting: SMD
Pulsed drain current: 12.8A
Power dissipation: 2.4W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 3.2A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 90mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Technische Details PJQ2460-AU_R1_000A1 PanJit Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 12.8A; 2.4W, Mounting: SMD, Pulsed drain current: 12.8A, Power dissipation: 2.4W, Gate charge: 9.3nC, Polarisation: unipolar, Drain current: 3.2A, Kind of channel: enhanced, Drain-source voltage: 60V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, On-state resistance: 90mΩ, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PJQ2460-AU_R1_000A1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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PJQ2460-AU_R1_000A1 | Hersteller : Panjit International Inc. | Description: DFN2020B-6L, MOSFET |
Produkt ist nicht verfügbar |
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PJQ2460-AU_R1_000A1 | Hersteller : Panjit International Inc. | Description: DFN2020B-6L, MOSFET |
Produkt ist nicht verfügbar |
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PJQ2460-AU_R1_000A1 | Hersteller : Panjit | MOSFET 60V N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
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PJQ2460-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 12.8A; 2.4W Mounting: SMD Pulsed drain current: 12.8A Power dissipation: 2.4W Gate charge: 9.3nC Polarisation: unipolar Drain current: 3.2A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 90mΩ |
Produkt ist nicht verfügbar |