PJQ4402P_R2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 21+ | 0.87 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.43 EUR |
| 2000+ | 0.38 EUR |
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Technische Details PJQ4402P_R2_00001 Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 39W (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN3333-8.
Weitere Produktangebote PJQ4402P_R2_00001
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
PJQ4402P_R2_00001 | Panjit International Inc. |
Description: 30V N-CHANNEL ENHANCEMENT MODE MVgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN3333-8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
PJQ4402P_R2_00001 | Panjit |
MOSFET /4402/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMN//PJ/DFN33338L-AS15/PJQ4402P-ASB9/DFN33338L-AS01 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
PJQ4402P-R2-00001 | Panjit |
MOSFET DFN3333-8L/MOS/DFN/NFET-30FQMN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJQ4402P_R2_00001 |
![]() |
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJQ4402P_R2_00001 |
![]() |
Hersteller: Panjit
MOSFET /4402/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMN//PJ/DFN33338L-AS15/PJQ4402P-ASB9/DFN33338L-AS01
MOSFET /4402/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMN//PJ/DFN33338L-AS15/PJQ4402P-ASB9/DFN33338L-AS01
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJQ4402P-R2-00001 |
![]() |
Hersteller: Panjit
MOSFET DFN3333-8L/MOS/DFN/NFET-30FQMN
MOSFET DFN3333-8L/MOS/DFN/NFET-30FQMN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


