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PJQ4403P_R2_00001

PJQ4403P_R2_00001 Panjit International Inc.

PJQ4403P.pdf Hersteller: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.32 EUR
10000+0.31 EUR
15000+0.29 EUR
25000+0.28 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PJQ4403P_R2_00001 Panjit International Inc.

Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V, Power Dissipation (Max): 2W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V.

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PJQ4403P_R2_00001 PJQ4403P_R2_00001 Hersteller : Panjit PJQ4403P-1867486.pdf MOSFETs 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 125720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.99 EUR
10+0.75 EUR
100+0.51 EUR
500+0.4 EUR
1000+0.33 EUR
5000+0.29 EUR
Mindestbestellmenge: 3
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PJQ4403P_R2_00001 PJQ4403P_R2_00001 Hersteller : Panjit International Inc. PJQ4403P.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
auf Bestellung 36229 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
23+0.79 EUR
100+0.54 EUR
500+0.43 EUR
1000+0.35 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4403P_R2_00001 Hersteller : PanJit Semiconductor PJQ4403P.pdf PJQ4403P-R2 SMD P channel transistors
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PJQ4403P-R2-00001 PJQ4403P-R2-00001 Hersteller : Panjit PJQ4403P-1867486.pdf MOSFET DFN3333-8L/MOS/DFN/NFET-30FQMP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH