PJQ4409P_R2_00001 Panjit International Inc.

Description: 30V P-CHANNEL ENHANCEMENT MODE M, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DFN3333-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 24A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.