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PJQ4414P_R2_00001

PJQ4414P_R2_00001 Panjit International Inc.

PJQ4414P.pdf Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V
auf Bestellung 4088 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
29+ 0.61 EUR
100+ 0.37 EUR
500+ 0.34 EUR
1000+ 0.23 EUR
2000+ 0.21 EUR
Mindestbestellmenge: 23
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Technische Details PJQ4414P_R2_00001 Panjit International Inc.

Description: 30V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, Power Dissipation (Max): 2W (Ta), 21W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V.

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Preis ohne MwSt
PJQ4414P_R2_00001 PJQ4414P_R2_00001 Hersteller : Panjit PJQ4414P-1867437.pdf MOSFET 30V N-Channel Enhancement Mode MOSFET
auf Bestellung 4630 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.78 EUR
10+ 0.63 EUR
100+ 0.43 EUR
500+ 0.33 EUR
1000+ 0.24 EUR
2500+ 0.23 EUR
5000+ 0.2 EUR
Mindestbestellmenge: 4
PJQ4414P_R2_00001 PJQ4414P_R2_00001 Hersteller : Panjit International Inc. PJQ4414P.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V
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