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PJQ4433EP-AU_R2_002A1

PJQ4433EP-AU_R2_002A1 Panjit

PJQ4433EP_AU-3239137.pdf Hersteller: Panjit
MOSFET 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 4930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.47 EUR
10+1.2 EUR
100+0.94 EUR
500+0.8 EUR
1000+0.65 EUR
5000+0.55 EUR
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Technische Details PJQ4433EP-AU_R2_002A1 Panjit

Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 68A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V, Power Dissipation (Max): 2.5W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote PJQ4433EP-AU_R2_002A1 nach Preis ab 0.62 EUR bis 1.83 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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PJQ4433EP-AU_R2_002A1 PJQ4433EP-AU_R2_002A1 Hersteller : Panjit International Inc. PJQ4433EP-AU.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
15+1.23 EUR
100+0.92 EUR
500+0.72 EUR
1000+0.64 EUR
2000+0.62 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4433EP-AU_R2_002A1 PJQ4433EP-AU_R2_002A1 Hersteller : Panjit International Inc. PJQ4433EP-AU.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
Qualification: AEC-Q101
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