Produkte > PANJIT SEMICONDUCTOR > PJQ4437EP_R2_00201

PJQ4437EP_R2_00201 PanJit Semiconductor


Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W
Case: DFN3333-8
Drain-source voltage: -30V
Drain current: -38A
On-state resistance: 15.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 13.5W
Polarisation: unipolar
Kind of package: reel
Gate charge: 32nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -123A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
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Technische Details PJQ4437EP_R2_00201 PanJit Semiconductor

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W, Case: DFN3333-8, Drain-source voltage: -30V, Drain current: -38A, On-state resistance: 15.4mΩ, Type of transistor: P-MOSFET, Power dissipation: 13.5W, Polarisation: unipolar, Kind of package: reel, Gate charge: 32nC, Kind of channel: enhancement, Gate-source voltage: ±25V, Pulsed drain current: -123A, Mounting: SMD, Anzahl je Verpackung: 1 Stücke.

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PJQ4437EP_R2_00201 Hersteller : PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W
Case: DFN3333-8
Drain-source voltage: -30V
Drain current: -38A
On-state resistance: 15.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 13.5W
Polarisation: unipolar
Kind of package: reel
Gate charge: 32nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -123A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH